Product attributes
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 60 V
Current at 25 ° C – continuous drain (Id): 190mA (Ta), 300mA (Tc)
Drive voltage (maximum Rds On, minimum Rds On): 5V, 10V
On resistance at different Id and Vgs (maximum): 4.5 ohms @ 100mA, 10V
Vgs (th) (maximum) at different IDs: 2.1V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 0.43 nC @ 4.5 V
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 20 pF @ 10 V
FET function:-
Power dissipation (maximum): 265mW (Ta), 1.33W (Tc)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: TO-236AB
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
2N7002NXAKR
Manufacturer: Nexperia USA Inc
Manufacturer Product Code: 2N7002NXAKR
Description: MOSFET N-CH 60V 190MA TO236AB
Detailed description: Surface mount type N channel 60 V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) TO-236AB
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