Product attributes
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 100V
Current at 25 ° C – continuous drain (Id): 170mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 10V
On resistance at different Id and Vgs (maximum): 6 ohms @ 170mA, 10V
Vgs (th) (maximum value) for different IDs: 2V @ 1mA
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 60 pF @ 25 V
FET function:-
Power dissipation (maximum): 300mW (Ta)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
BSS123-7-F
Manufacturer: Dior Incorporated
Manufacturer Product Code: BSS123-7-F
Description: MOSFET N-CH 100V 170MA SOT23-3
Detailed description: Surface mount type N channel 100 V 170mA (Ta) 300mW (Ta) SOT-23-3
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