Product attributes
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 60 V
Current at 25 ° C – Continuous Drain (Id): 260mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 4.5V, 10V
On resistance at different Id and Vgs (maximum): 2.5 ohms @ 240mA, 10V
Vgs (th) (maximum) at different IDs: 2.5V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 0.81 nC @ 5 V
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 26.7 pF @ 25 V
FET function:-
Power dissipation (maximum): 300mW (Tj)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3 (TO-236)
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
2N7002ET1G
Manufacturer: onsemi
Manufacturer Product Code: 2N7002ET1G
Description: MOSFET N-CH 60V 260MA SOT23-3
Detailed description: Surface mount type N channel 60 V 260mA (Ta) 300mW (Tj) SOT-23-3
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