Product attributes
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 50 V
Current at 25 ° C – Continuous Drain (Id): 130mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 5V
On resistance at different Id and Vgs (maximum): 10 ohms @ 100mA, 5V
Vgs (th) (maximum value) for different IDs: 2V @ 1mA
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 45 pF @ 25 V
FET function:-
Power dissipation (maximum): 300mW (Ta)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
BSS84-7-F
Manufacturer: Dior Incorporated
Manufacturer Product Code: BSS84-7-F
Description: MOSFET P-CH 50V 130MA SOT23-3
Detailed description: Surface mount type P channel 50 V 130mA (Ta) 300mW (Ta) SOT-23-3
描述
用户评价 (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.
相关产品
评价
目前还没有评价