Product attributes
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 50 V
Current at 25 ° C – Continuous Drain (Id): 180mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 10V
On resistance at different Id and Vgs (maximum): 7.5 ohms @ 100mA, 10V
Vgs (th) (maximum) at different IDs: 2.1V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 0.35 nC @ 5 V
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 36 pF @ 25 V
FET function:-
Power dissipation (maximum): 350mW (Ta), 1.14W (Tc)
Working temperature: -55 ° C~150 ° C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Installation type: surface mount type
Supplier Device Packaging: TO-236AB
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
BSS84AK,215
Manufacturer: Nexperia USA Inc
Manufacturer Product Code: BSS84AK, 215
Description: MOSFET P-CH 50V 180MA TO236AB
Detailed description: Surface mount type P channel 50 V 180mA (Ta) 350mW (Ta), 1.14W
描述
用户评价 (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.
相关产品
评价
目前还没有评价