Product attributes
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 30 V
Current at 25 ° C – Continuous drain (Id): 350mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 2.5V, 10V
On resistance at different Id and Vgs (maximum): 2.8 ohms @ 250mA, 10V
Vgs (th) (maximum) at different IDs: 1.5V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 0.9 nC @ 10 V
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 23.2 pF @ 25 V
FET function:-
Power dissipation (maximum): 350mW (Ta)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
DMN63D8L-7
Manufacturer: Dior Incorporated
Manufacturer Product Code: DMN63D8L-7
Description: MOSFET N-CH 30V 350MA SOT23
Detailed description: Surface mount type N channel 30 V 350mA (Ta) 350mW (Ta) SOT-23-3
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