Product attributes
Transistor type: PNP
Current collector (Ic) (maximum): 200 mA
Voltage emitter breakdown (maximum): 40 V
Vce saturation voltage drop (maximum value) at different Ib and Ic: 400mV @ 5mA, 50mA
Current collector cutoff (maximum value):-
DC current gain (hFE) at different Ic and Vce (minimum value): 100 @ 10mA, 1V
Power – Maximum: 300 mW
Frequency transition: 250MHz
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
Supplier Device Packaging: SOT-23-3 (TO-236)
MMBT3906LT1
Manufacturer: onsemi
Manufacturer Product Code: MMBT3906LT1G
Description: TRANS PNP 40V 0.2A SOT23-3
Detailed description: Transistor Bipolar (BJT) – Single PNP 40 V 200 mA 250MHz 300 mW Surface mount SOT-23-3 (TO-236)
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