Product attributes
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 20V
Current at 25 ° C – continuous drain (Id): 3.1A (Tc)
Drive voltage (maximum Rds On, minimum Rds On): 2.5V, 4.5V
On resistance at different Id and Vgs (maximum value): 112 milliohms @ 2.8A, 4.5V
Vgs (th) (maximum value) for different IDs: 1V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 10 nC @ 4.5 V
Vgs (maximum value): ± 8V
Input capacitance (Ciss) at different Vds (maximum): 405 pF @ 10 V
FET function:-
Power dissipation (maximum): 860mW (Ta), 1.6W (Tc)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3 (TO-236)
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
SI2301CDS-T1-GE3
Manufacturer: Vishay Siliconix
Manufacturer Product Code: SI2301CDS-T1-GE3
Description: MOSFET P-CH 20V 3.1A SOT23-3
Detailed description: Surface mount type P channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) SOT-23-3 (TO-236)
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