Product attributes
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 20V
Current at 25 ° C – Continuous drain (Id): 3A (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 2.5V, 4.5V
On resistance at different Id and Vgs (maximum): 120 milliohms @ 2.8A, 4.5V
Vgs (th) (maximum) at different IDs: 1.2V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum): 5.5 nC @ 4.5 V
Vgs (maximum value): ± 8V
Input capacitance (Ciss) at different Vds (maximum): 476 pF @ 10 V
FET function:-
Power dissipation (maximum): 1.5W (Ta)
Working temperature: -55 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: SOT-23-3
Packaging/Shell: TO-236-3, SC-59, SOT-23-3
DMG2301L-7
Manufacturer: Dior Incorporated
Manufacturer Product Code: DMG2301L-7
Description: MOSFET P-CH 20V 3A SOT23
Detailed description: Surface mount type P channel 20 V 3A (Ta) 1.5W (Ta) SOT-23-3
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