Product attributes
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Leakage source voltage (Vdss): 600 V
Current at 25 ° C – Continuous drain (Id): 6A (Tc)
Drive voltage (maximum Rds On, minimum Rds On): 10V
On resistance at different Id and Vgs (maximum): 600 milliohms @ 1.7A, 10V
Vgs (th) (maximum value) at different IDs: 4V @ 80 µ A
Gate charge (Qg) at different Vgs (maximum): 9 nC @ 10 V
Vgs (maximum value): ± 20V
Input capacitance (Ciss) at different Vds (maximum): 363 pF @ 400 V
FET function:-
Power dissipation (maximum): 30W (Tc)
Working temperature: -40 ° C~150 ° C (TJ)
Installation type: surface mount type
Supplier Device Packaging: PG-TO252-3
Packaging/Shell: TO-252-3, DPAK (2 leads+ear tabs), SC-63
IPD60R600P7S
¥3.00
Manufacturer: Infineon Technologies
Manufacturer Product Code: IPD60R600P7SAUMA1
Description: MOSFET N-CH 600V 6A TO252-3
Detailed description: Surface mount type N channel 600 V 6A (Tc) 30W (Tc) PG-TO252-3
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